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4V Drive Nch MOSFET
RHP020N06
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
MPT3
Features
1) Low On-resistance.
4.5
1.6
1.5
2) High speed switching.
(1)
(2)
(3)
3) Wide SOA.
0.4
0.5
0.4
0.4
(1)Gate
(2)Drain
1.5
3.0
1.5
Applications
Switching
Packaging specifications and h FE
(3)Source
Inner circuit
Abbreviated symbol : LR
Package
Taping
DRAIN
Type
RHP020N06
Code
Basic ordering unit (pieces)
T100
1000
GATE
? 2
? 1
SOURCE
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Absolute maximum ratings (Ta=25 ° C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
60
± 20
Unit
V
V
Drain current
Source current
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
± 2
± 8
2
8
A
A
A
A
Total power dissipation
Channel temperature
Range of storage temperature
P D
Tch
Tstg
500
2
150
? 55 to + 150
mW
W
° C
° C
? 2
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a 40 40 0.7mm ceramic board
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth(ch-a)
250
62.5
° C/W
° C/W
?
? When mounted on a 40 40 0.7mm ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.03 - Rev.A
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